TLP3507 2002-09-25 1 toshiba photocoupler gaas ired & photo-triac TLP3507 triac driver programmable controllers ac ? output module solid state relay the toshiba TLP3507 consists of a zero voltage crossing turn-on photo ? triac optically coupled to a gallium arsenide infrared emitting diode in a 8 lead plastic dip package. peak off ? state voltage: 600 v (min.) trigger led current: 1 0 ma (max.) on ? state current: 0.5a rms (max.) isolation voltage: 2500 v rms (min.) zero crossing fanction ul recognized: ul 1 577, file no. e67349 pin configurations (top view) 2 2 : anode 3 : cathode 5 : triac gate 6 : triac t1 8 : triac t2 5 8 6 3 zc unit in mm toshiba 11 ? 10c3 weight: 0.52g
TLP3507 2002-09-25 2 maximum ratings (ta = 25c) characteristic symbol rating unit forward current i f 50 ma forward current derating (ta 53c) ? i f / c 0.7 ma / c peak forward current (100 s pulse, 100 pps) i fp 1 a reverse voltage v r 5 v led junction temperature t j 125 c off state output terminal voltage v drm 600 v ta = 40c 0.5 on state rms current ta = 60c i t(rms) 0.35 a on state current derating (ta 40c) ? i t / c 7.2 ma / c peak current from snubber circuit (100s pulse, 120 pps) i sp 2 a peak nonrepetitive surge current (50hz, peak) i tsm 5 a detector junction temperature t j 110 c storage temperature range t stg 40~125 c operating temperature range t opr 20~80 c lead soldering temperature (10s) t sol 260 c isolation voltage (ac, 1 min., r.h. 60%) (note) bv s 2500 v rms (note) device considereded a two terminal device: pins 2 and 3 shorted together, and pins 5, 6 and 8 shorted together. recommended operating conditions characteristic symbol min. typ. max. unit supply voltage v ac D D 240 v ac forward current i f 15 20 25 ma peak current from snubber circuit i sp D D 1 a operating temperature t opr 20 D 80 c
TLP3507 2002-09-25 3 individual electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit forward voltage v f i f = 10 ma 1.0 1.15 1.3 v reverse current i r v r = 5 v D D 10 a led capacitance c t v = 0, f = 1 mhz D 30 D pf peak off state current i drm v drm = 600 v, ta = 110c D D 100 a peak on state voltage v tm i tm = 0.75 a D D 3.0 v holding current i h r l = 100 ? D D 25 ma critical rate of rise of off state voltage dv / dt v in = 240 v rms (fig.1) D 500 D v / s detector critical rate of rise of commutating voltage dv / dt (c) v in = 240 v rms , i t = 0.5 a rms (fig.1) D 5 D v / s coupled electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit trigger led current i ft v t = 6 v D D 10 ma inhibit voltage v ih i f = rated i ft D D 50 v leakage in inhibited state i ih i f = rated i ft v t = rated v drm D 200 D a capacitance (input to output) c s v s = 0, f = 1 mhz D 1.5 D pf isolation resistance r s v s = 500 v, r.h. 60% 510 10 10 14 D ? ac, 1 minute 2500 D D ac, 1 second, in oil D 5000 D vrms isolation voltage bv s dc, 1 minute, in oil D 5000 D v dc fig.1: dv / dt test circuit dv / dt(c) 5v,v cc 0v dv / dt v in v cc r l 2 3 8 6 5 r in 120 ?
TLP3507 2002-09-25 4 i t(rms) ? ta ambient temperature ta (c) on-state current i t(rms) (a) 0.8 0 -20 1.0 0.6 0.4 0.2 0 20 40 60 80 100 120 forward voltage temperature coefficient v f / ta ( mv / c) v f / ta ? i f -0.4 0.1 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 0.3 1 3 10 30 50 0.5 5 forward current i f (ma) i fp ? d r duty cycle ratio d r allowable pulse forward current i fp (ma) 3 10 5000 1000 500 300 100 50 30 10 -2 3 3 3 10 -3 10 -1 10 0 3000 pulse width 100s ta = 25c i fp ? v fp pulse forward voltage v fp (v) pulse forward current i fp (ma) 0.6 1000 0 500 300 100 50 30 10 5 3 1.0 1.4 1.8 2.2 2.6 pulse width 10s repetitive frequency = 100hz ta = 2 5 c 3.0 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 0 80 0 -20 100 60 40 20 20 40 60 80 100 120 i f ? v f forward voltage v f (v) forward current i f (ma) 0.6 0.1 100 10 5 3 1 0.5 0.3 1.0 1.2 1.6 0.8 1.4 1.8 30 50 ta = 2 5 c
TLP3507 2002-09-25 5 normalized i ft ? ta ambient temperature ta (c) trigger led current i ft (arbitrary unit) 100 3 0.1 -40 2 1.2 1 0.5 -20 0 20 40 60 0.3 80 v t = 3v normalized i h ? ta holding current i h (arbitrary unit) 3 0.1 -40 2 1.2 1 0.5 -20 0 20 40 60 0.3 100 80 ambient temperature ta (c) normalized i drm ? ta ambient temperature ta (c) peak off-state current i drm (arbitrary unit) 10 3 0 10 2 10 1 10 0 20 40 60 80 100 v drm = rated normalized v drm ? ta off-state output terminal voltage v drm (arbitrary unit) ambient temperature ta (c) 1.4 0.2 -40 1.2 1.0 0.8 -20 0 20 40 60 0.6 100 80 0.4 normalized v ih ? ta inhibit voltage v ih (arbitrary unit) ambient temperature ta (c) 3 0.1 -40 2 1.2 1 0.5 -20 0 20 40 60 0.3 100 80 i f = rated i ft normalized i ih ? ta inhibit current i ih (arbitrary unit) ambient temperature ta (c) 3 0.1 -40 2 1.2 1 0.5 -20 0 20 40 60 0.3 100 80 i f = rated i ft v t = rated v drm
TLP3507 2002-09-25 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ebc restrictions on product use
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